please design the appropriate reliability upon reviewing the ty semiconductor reliability handbook SSM3K02T ? small package ? low on resistance : r on = 200 m ? (max) (v gs = 4 v) : r on = 250 m ? (max) (v gs = 2.5 v) ? low gate threshold voltage: v th = 0.6~1.1 v (v ds = 3 v, i d = 0.1 ma) absolute maximum ratings (ta = 25c) characteristics symbol rating unit drain-source voltage v ds 30 v gate-source voltage v gss 10 v dc i d 2.5 drain current pulse i dp 5.0 a drain power dissipation (ta = 25 c) p d (note 1) 1250 mw channel temperature t ch 150 c storage temperature range t stg ? 55~150 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/v oltage, etc.) are within the absolute maximum ratings. (?handling precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). note 1: mounted on fr4 board (25.4 mm 25.4 mm 1.6 t, cu pad: 645 mm 2 , t = 10 s) note 2: the pulse width limit ed by max channel temperature. marking equivalent circuit handling precaution when handling individual devices (which are not yet mount ed on a circuit board), be sure that the environment is protected against electrostatic electr icity. operators should wear anti-static clothing, and containers and other objects that come into direct contact with devi ces should be made of anti-static materials. unit: mm weight: 0.01 g (typ.) k u 3 1 2 3 12 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification
electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit gate leakage current i gss v gs = 10 v, v ds = 0 ? ? 5 a drain-source breakdown voltage v (br) dss i d = 1 ma, v gs = 0 30 ? ? v drain cut-off current i dss v ds = 30 v, v gs = 0 ? ? 1 a gate threshold voltage v th v ds = 3 v, i d = 0.1 ma 0.6 ? 1.1 v forward transfer admittance ? y fs ? v ds = 3 v, i d = 1.25 a (note) 2.2 ? ? s i d = 1.25 a, v gs = 4 v (note) ? 140 200 drain-source on resistance r ds (on) i d = 1.25 a, v gs = 2.5 v (note) ? 180 250 m input capacitance c iss v ds = 10 v, v gs = 0, f = 1 mhz ? 115 ? pf reverse transfer capacitance c rss v ds = 10 v, v gs = 0, f = 1 mhz ? 24 ? pf output capacitance c oss v ds = 10 v, v gs = 0, f = 1 mhz ? 60 ? pf turn-on time t on ? 52 ? switching time turn-off time t off v dd = 15 v, i d = 0.5 a, v gs = 0~2.5 v, r g = 4.7 ? 80 ? ns note: pulse test switching time test circuit precaution v th can be expressed as voltage between gate and source when low operat ing current value is i d = 100 a for this product. for normal switching operation, v gs (on) requires higher voltage than v th and v gs (off) requires lower voltage than v th . (relationship can be established as follows: v gs (off) < v th < v gs (on) ) please take this into consid eration for using the device. 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com SSM3K02T smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification
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